Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs Layers

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Abstract
Electrical properties are measured at 300°K and 77°K of epitaxial n-GaAs layers grown by the Ga/AsCl3/H2 method under various growth conditions. To investigate doping behaviors of main residual impurities, donor and acceptor concentrations N D and N A are calculated as a function of the growth temperature and substrate orientation ((100), (110), (311) A and (111) B). For each orientation, the compensation ratio K(≡N A /N D ) is found to be nearly constant and K is increased as the arsenic partial pressure is decreased, both suggesting that amphoteric impurities (probably Si) are main donors and acceptors. Reaction kinetics are developed based on a simple model of amphoteric impurity doping and compared with experiment. Deviations of K from the constant value and some other possible effects are also discussed.

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