Filamentation in conventional double heterostructure and quantum well semiconductor lasers
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (7) , 1297-1301
- https://doi.org/10.1109/3.966
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Carrier-induced refractive-index change in quantum-well lasersOptics Letters, 1988
- Saturation effects in semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Carrier induced refractive index change in AlGaAs quantum well lasersApplied Physics Letters, 1984
- Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well LasersJapanese Journal of Applied Physics, 1984
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- Longitudinal mode self-stabilization in semiconductor lasersJournal of Applied Physics, 1982
- Spectral dependence of the change in refractive index due to carrier injection in GaAs lasersJournal of Applied Physics, 1981
- Carrier density dependence of refractive index in AlGaAs semiconductor lasersIEEE Journal of Quantum Electronics, 1980
- Effect of injection current on the dielectric constant of an inbuilt waveguide in twin-transverse-junction stripe lasersElectronics Letters, 1979
- Carrier and gain spatial profiles in GaAs stripe geometry lasersJournal of Applied Physics, 1973