Warm electron energy loss in GaInAs/AlInAs high electron mobility transistor structures

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Abstract
Electron energy loss rates via the emission of acoustic phonons in moderately degenerate GaInAs/AlInAs high electron mobility transistor structures are investigated at electron temperatures between Te=1.8 and 15 K. Two experimental techniques, Shubnikov–de Haas and mobility measurements were employed in the investigations. The results are compared with a model based on three‐dimensional electron energy loss by piezoelectric and deformation potential scattering. It is shown that the enhanced loss rates at high electric fields as obtained using the former technique is the result of its failure at these fields. The agreement between the results of the mobility experiments and the theory is excellent over the temperature range of interest.