The investigation of transport properties in a-si by fast transient techniques
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 90 (1-3) , 171-178
- https://doi.org/10.1016/s0022-3093(87)80407-6
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Determination of the extended-state electron mobility in a-SiPhilosophical Magazine Part B, 1985
- The study of transport and related properties of amorphous silicon by transient experimentsJournal of Non-Crystalline Solids, 1983
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Carrier propagation in sputtered-Si:HPhysical Review B, 1982
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- Electron drift mobility in hydrogenated a-SiApplied Physics Letters, 1980
- Electronic transport and localization in low mobility solids and liquidsAdvances in Physics, 1974
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970