0.2 µm AlSb/InAs HEMTs with 5 V gate breakdownvoltage

10 November 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (23) , 1983-1984
https://doi.org/10.1049/el:19941316

Abstract

DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.2 µm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an f_T of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of f_max is examined indicating a significant reduction in the unilateral gain due to impact ionisation.

Keywords

This publication has 3 references indexed in Scilit:

Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
IEEE Electron Device Letters, 1994
Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs
Electronics Letters, 1993
High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
IEEE Electron Device Letters, 1992