On carrier densities and lifetimes in a-Si: H at low temperatures
- 1 April 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 61 (4) , 251-258
- https://doi.org/10.1080/09500839008202367
Abstract
A simple model for the equilibrium carrier population in a-Si:H under illumination at low temperature is given. Its principal features are that the distribution is distant-pair, or non-geminate, and that the controlling recombination is radiative. We compare its predictions with the results of LESR, a.c. loss, photoconductivity and photoluminescence (PL) lifetime distributions and find satisfactory agreement with experiment.Keywords
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