A comparison of photo- and electroluminescence in a-Si p-i-n junctions
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 695-698
- https://doi.org/10.1016/0022-3093(85)90753-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Radiative recombination at dangling bonds in-Si:HPhysical Review B, 1984
- Luminescence phenomena in a-Si:H p-i-n junctionsJournal of Non-Crystalline Solids, 1983
- O.D.M.R. investigation of recombination in μc-Si:HPhilosophical Magazine Part B, 1983
- Electroluminescence in amorphous silicon p-i-n junctionsPhilosophical Magazine Part B, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Excitation wavelength and intensity dependence of luminescence decay in a-Si(H)Solid State Communications, 1980