1.5 μm InGaAsP/InP buried crescent superluminescent diode on a p-InP substrate
- 18 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (25) , 2502-2503
- https://doi.org/10.1063/1.102871
Abstract
An InGaAsP/InP superluminescent diode (SLD) emitting at 1.54 μm has been fabricated. The device uses a buried crescent structure on a p‐InP substrate. The parameters were optimized for high output power, small spectral modulation, and smooth far‐field operation. The coherence function of the SLD emission was studied systematically. An output power of 5 mW, a coherence length of 41 μm, and a second coherence peak suppression ratio of 22 dB were obtained.Keywords
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