Antireflection coatings on semiconductor laser facets using sputtered lead silicate glass
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (9) , 1373-1375
- https://doi.org/10.1109/jlt.1986.1074898
Abstract
RF-sputtered lead silicate [PbO(54 m/o)-SiO2(46 m/o)] films were used to antireflection coat InGaAsP laser facets. Modal reflectivities of1-3 \times 10^{-4}were obtained.Keywords
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