Si 2pcore-level shifts at the Si(100)-interface: An experimental study
- 15 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (11) , 7686-7689
- https://doi.org/10.1103/physrevb.54.7686
Abstract
Si 2p core-level shifts are measured for a model system generated from HSi( N and Si(100)-2×1 and compared to the result obtained from a species containing similar coordination about silicon, HSi( . The dramatic difference in the products obtained is explained in terms of the chelate effect. The results are compared to previous results obtained using spherosiloxane clusters and an empirical, model-compound-based core-level shift assignment scheme is compared and contrasted with the conventional formal oxidation state assignment scheme. © 1996 The American Physical Society.
Keywords
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