Si 2pcore-level shifts at the Si(100)-SiO2interface: An experimental study

Abstract
Si 2p core-level shifts are measured for a model system generated from HSi(OCH2 CH2 )3N and Si(100)-2×1 and compared to the result obtained from a species containing similar coordination about silicon, HSi(OCH3 )3. The dramatic difference in the products obtained is explained in terms of the chelate effect. The results are compared to previous results obtained using spherosiloxane clusters and an empirical, model-compound-based core-level shift assignment scheme is compared and contrasted with the conventional formal oxidation state assignment scheme. © 1996 The American Physical Society.