SiO2/Si(100) interface studied by Al Kα x-ray and synchrotron radiation photoelectron spectroscopy
- 22 November 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (21) , 2941-2943
- https://doi.org/10.1063/1.110279
Abstract
Both synchrotron radiation photoemission spectroscopy (PES) and Al Kα photoelectron spectroscopy (XPS) are used to determine the suboxide distribution at SiO2/Si (100) interfaces. High resolution PES measurements clearly resolved various suboxides with chemical shifts of 0.97, 1.80, and 2.60 eV for Si+1, Si+2, and Si+3, respectively. A total of 9.3×1014 atoms cm−2 of suboxide is found by PES measurements while only 4.2×1014 atoms cm−2 is measured by XPS on the same sample. This discrepancy is neither caused, as previously believed, by a difference in SiO2/Si (100) quality nor by a difference in methodology in data analysis. The possible factors, e.g., electron mean‐free path and photoionization cross section, which contribute to the difference between PES and XPS data, are considered.Keywords
This publication has 9 references indexed in Scilit:
- Adsorption of atomic hydrogen on Si(100) surfacePhysical Review Letters, 1992
- Vibrationally resolved core-level photoelectron spectroscopy: Si 2plevels ofandmoleculesPhysical Review Letters, 1990
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- A reassessment of electron escape depths in silicon and thermally grown silicon dioxide thin filmsSurface Science, 1988
- Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke modelJournal of Applied Physics, 1987
- The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interfaceJournal of Applied Physics, 1987
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- (100) and (110) SiSiO2 interface studies by MeV ion backscatteringSurface Science, 1980