Probing the transition layer at the SiO2-Si interface using core level photoemission
- 1 January 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 93-95
- https://doi.org/10.1063/1.94565
Abstract
High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2‐Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3+:Si2+:Si1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 Å width).Keywords
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