Evidence for induced far-infrared emission from p-Ge in crossed electric and magnetic fields

1 November 1985

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 47 (9) , 958-960
https://doi.org/10.1063/1.95942

Abstract

Experimental evidence is presented for stimulated far‐infrared emission from population‐inverted hot‐carrier system in p Ge. The spectroscopic study by use of an n‐InSb cyclotron‐resonance detector reveals that the spectrum of the emission consists of a fairly sharp band located at the photon energy ∼5 or ∼10 meV depending on the applied fields.

Keywords

This publication has 3 references indexed in Scilit:

Streaming motion and population inversion of hot carriers in crossed electric and magnetic fields
Advances in Physics, 1982
Far-Infrared Emission from Population-Inverted Hot-Carrier System in $p$ -Ge
Physical Review Letters, 1982
Hot-carrier population inversion in $p - G e$
Physical Review B, 1981