Study of the peculiarities of film growth from molecular beams by the method of simulation
- 16 November 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 92 (1) , 109-113
- https://doi.org/10.1002/pssa.2210920108
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Study of epitaxial growth of diamond-like semiconductor films by computer simulationPhysica Status Solidi (a), 1980
- The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular BeamsPhysica Status Solidi (a), 1979
- Equation of State Calculations by Fast Computing MachinesThe Journal of Chemical Physics, 1953