The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

This publication has 4 references indexed in Scilit:

• Step motion of the growth surface in the initial stage of semiconductor film epitaxy with ion sputtering
  Thin Solid Films, 1974
• Epitaxial growth of silicon assisted by ion implantation
  Radiation Effects, 1971
• Epitaxial Growth with Light Irradiation
  Japanese Journal of Applied Physics, 1968
• A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques. IV. Additional confirmation of the induction period and nucleation mechanisms
  Philosophical Magazine, 1968