Epitaxial growth of silicon assisted by ion implantation
- 1 May 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 9 (1-2) , 1-4
- https://doi.org/10.1080/00337577108242022
Abstract
Epitaxial n-type silicon layers were grown on p-type silicon substrates by vacuum deposition combined with silicon ion implantation (PIVD). A dependency of electrical characteristics of Si epitaxial junction on acceleration energy of silicon ions was measured. A location of the interface and a distribution profile of defects were investigated by means of He+ back-scattering technique, and some distance shift of the interface occurred in the case of PIVD.Keywords
This publication has 4 references indexed in Scilit:
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- The Effects of an Electric Field on Epitaxial Vapor GrowthJournal of the Electrochemical Society, 1963
- Growth mechanism and defect structures in epitaxial siliconPhilosophical Magazine, 1962
- Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon SubstratesJournal of the Electrochemical Society, 1962