State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
- 1 August 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (16) , 924-925
- https://doi.org/10.1049/el:20020603
Abstract
The DC and microwave power performance of metal organic chemical vapour deposition-grown AlGaN/GaN HEMTs on SiC substrate is reported. The devices exhibited high maximum current density of 1.1 A/mm with high peak extrinsic transconductance of 234 mS/mm. At 26 GHz, the devices achieved continuous-wave (CW) power density of 5 W/mm with power-added-efficiency of 30.1%, which represents the highest output power density and associated power-added efficiency reported above 20 GHz.Keywords
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