High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substrates
- 31 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (16) , 1413-1415
- https://doi.org/10.1049/el:19970933
Abstract
Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25 µm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39 V was also obtained.Keywords
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