AlGaN/GaN HEMTs grown on SiC substrates
- 30 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (3) , 242-243
- https://doi.org/10.1049/el:19970122
Abstract
The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100 V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6 GHz and an fmax of 11 GHz were measured for 1 µm gate length devices.Keywords
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