Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks

Abstract
Focused ion beam (FIB) and ion milling techniques are developed for the fabrication of Bi2Sr2CaCu2O8+1d (Bi-2212) stacked junctions with in-plane size L ab ranging from several microns down to the submicron scale without degradation of superconducting transition temperature T c. It is found that the behavior of submicron junctions (L abV of the structure is consistent with the Coulomb charging energy of a single pair, ΔV=e/C, where C is the effective capacitance of the stack. It is considered that this behavior originates from the Coulomb blockade of the intrinsic Josephson tunneling in submicron Bi-2212 stacks.
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