2-d data collection in high pressure powder diffraction studies-applications to semiconductors
- 1 January 1996
- journal article
- intensity analysis-of-power-diffraction-data
- Published by Taylor & Francis in High Pressure Research
- Vol. 14 (4-6) , 277-286
- https://doi.org/10.1080/08957959608201412
Abstract
Using angle-dispersive diffraction techniques and synchrotron radiation, we have made a detailed re-examination of the high-pressure behaviour of a number of core II-VI, III-V and group IV semiconductors. Despite much previous work on these materials, the good resolution afforded by angle-dispersive techniques, and the high-sensitivity of the image-plate area detector have yielded many new results which reveal that the accepted structural systematics have to be modified quite substantially. In this paper, we summarise the newly emerging structural systematics, and use the results to show how access to full 2-d powder patterns has proved essential in determining correct crystal structures.Keywords
This publication has 12 references indexed in Scilit:
- Phase transitions in CdTe to 28 GPaPhysical Review B, 1995
- Structural studies of tetrahedrally-coordinated semiconductors at high pressure—New systematicsJournal of Physics and Chemistry of Solids, 1995
- Structural studies of III–V and group IV semiconductors at high pressureJournal of Physics and Chemistry of Solids, 1995
- Structural studies of II–VI semiconductors at high pressureJournal of Physics and Chemistry of Solids, 1995
- Ordered Superstructure of InSb-IVPhysical Review Letters, 1995
- High-Pressure Powder Diffraction on Synchrotron SourcesJournal of Synchrotron Radiation, 1994
- Crystal structure of ZnTe III at 16 GPaPhysical Review Letters, 1994
- Deviatoric stress measurement under uniaxial compression by a powder x-ray diffraction methodJournal of Applied Physics, 1994
- Phase transitions in CdTe to 5 GPaPhysical Review B, 1993
- Correction of intensities for preferred orientation in powder diffractometry: application of the March modelJournal of Applied Crystallography, 1986