Radical-assisted organometallic vapor-phase epitaxial growth of GaAs
- 21 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2124-2126
- https://doi.org/10.1063/1.106100
Abstract
For the first time, radicals have been added to assist organometallic vapor‐phase epitaxial (OMVPE) growth of GaAs at low temperatures. Supplemental t‐C4H9 radicals from the pyrolysis of azo‐t‐butane [(t‐C4H9)2N2] were used to increase the growth rate of GaAs from trimethylgallium [TMGa, (CH3)3Ga] and arsine (AsH3) at temperatures as low as 390 °C. Mass spectroscopy studies show that the added radicals enhance the decomposition rates of both TMGa and AsH3. The GaAs growth rate was increased by a factor of 6 at 450 °C. The radical‐assisted OMVPE grown samples are, indeed, GaAs based on microprobe analysis. Spectra from Raman scattering experiments further confirm that the GaAs is single crystalline.Keywords
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