Correlation between CMOS Transistor and Capacitor Measurements of Interface Trap Spectra
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1228-1233
- https://doi.org/10.1109/tns.1986.4334583
Abstract
The radiation-induced change in the energy spectra of SiO2-Si interface traps as determined using the charge-pumping and weak-inversion techniques on CMOS transistors and using the quasi-static C-V and detailed model techniques on CMOS capacitors are compared. Over the range of approximately 1010 to 1012 cm-1 eV-1, good quantitative agreement is obtained between these methods.Keywords
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