Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices

This publication has 16 references indexed in Scilit:

• Nonplanar VLSI device analysis using the solution of Poisson's equation
  IEEE Transactions on Electron Devices, 1980
• Maximum surface and bulk electric fields at breakdown for planar and beveled devices
  IEEE Transactions on Electron Devices, 1978
• The planar junction etch for high voltage and low surface fields in planar devices
  IEEE Transactions on Electron Devices, 1977
• A substrate etch geometry for near ideal breakdown voltage in p-n junction devices
  IEEE Transactions on Electron Devices, 1977
• A general method for predicting the avalanche breakdown voltage of negative bevelled devices
  IEEE Transactions on Electron Devices, 1976
• Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions
  IEEE Transactions on Electron Devices, 1975
• Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions
  Solid-State Electronics, 1975
• Field distribution near the surface of beveled P-N junctions in high-voltage devices
  IEEE Transactions on Electron Devices, 1973
• Measurement of the ionization rates in diffused silicon p-n junctions
  Solid-State Electronics, 1970
• Control of electric field at the surface of P-N junctions
  IEEE Transactions on Electron Devices, 1964