Monte Carlo algorithm for generation-recombination noise in semiconductors
- 21 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (12) , 925-927
- https://doi.org/10.1063/1.98803
Abstract
We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.Keywords
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