Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films
- 1 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1152-1160
- https://doi.org/10.1063/1.337360
Abstract
We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.This publication has 27 references indexed in Scilit:
- Laterally seeded regrowth of silicon over SiO2 through strip electron beam irradiationApplied Physics Letters, 1983
- Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2Journal of the Electrochemical Society, 1983
- Recrystallization of polysilicon films using incoherent lightMaterials Letters, 1982
- Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater OvenJournal of the Electrochemical Society, 1982
- Arc lamp zone melting and recrystallization of Si films on oxidized silicon substratesApplied Physics Letters, 1982
- Orientation selection by zone-melting silicon films through planar constrictionsApplied Physics Letters, 1982
- Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beamApplied Physics Letters, 1982
- Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallographyApplied Physics Letters, 1982
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Single-crystal germanium films by micro-zone meltingSolid-State Electronics, 1963