Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beam
- 1 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (5) , 394-395
- https://doi.org/10.1063/1.93114
Abstract
Continuous single-crystal Si films longer than 600 μm over SiO2 have been produced with or without lateral epitaxial growth from bulk silicon seed by changing the mode structure of the cw Ar laser beam. The thermal profile of the laser spot is controlled by using a doughnut-shaped beam instead of usual Gaussian one to suppress competitive nucleation from side edges of the molten zone. The result indicates that the liquid-solid interface line profile is the most essential limiting parameter on the mechanism of regrowth.Keywords
This publication has 3 references indexed in Scilit:
- The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substratesApplied Physics Letters, 1981
- Lateral Epitaxial Growth in Poly-Si Film over SiO2 from Single-Si Seed by Scanning CW Ar Laser AnnealingJapanese Journal of Applied Physics, 1981
- Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structuresApplied Physics Letters, 1981