Comparative analysis of growth rate reductions on shadow masked substrates
- 9 December 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24) , 3145-3147
- https://doi.org/10.1063/1.105766
Abstract
The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is investigated. An analytical description based on simple concepts for a complex geometry shows good agreement with the experimental results and enables the determination of quantum well thickness variations in optical waveguide structures. The growth rate reduction (or: ratio of growth rates) r(u) in the middle of the channel increases as the width‐to‐height ratio of the mask opening is increased.Keywords
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