Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow mask
- 9 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2) , 168-170
- https://doi.org/10.1063/1.103973
Abstract
A novel shadow masking technique is proposed for the local variation of growth velocity in GaAs/AlGaAs structures grown on GaAs by metalorganic vapor phase epitaxy. This mask makes use of epitaxially grown spacer and mask layers and windows in the mask are lithographically defined. This results in a highly accurate and reproducible shadow mask which can be removed by lift-off. Growth velocity variations up to 50% have been observed. The application of this technique to the coupling of passive and active waveguide structures is proposed.Keywords
This publication has 16 references indexed in Scilit:
- Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructuresApplied Physics Letters, 1989
- Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold currentElectronics Letters, 1989
- Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substratesIEEE Journal of Quantum Electronics, 1989
- Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling techniqueApplied Physics Letters, 1989
- Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguidesJournal of Crystal Growth, 1988
- Growth behavior during nonplanar metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- High quality molecular beam epitaxial growth on patterned GaAs substratesApplied Physics Letters, 1985