Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 820-824
- https://doi.org/10.1016/0022-0248(88)90625-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Planar VPE infill 1.3 μm integrated laser/monitor photodiode with CARIBE etched facetsElectronics Letters, 1986
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- Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition methodApplied Physics Letters, 1985
- High-performance DC-PBH lasers at 1.52 μm by a hybrid MOVPE/LPE processElectronics Letters, 1985
- Improved high-temperature performance of 1.52 (μm InGaAsP laser diodes fabricated by two-step VPE and LPEElectronics Letters, 1985
- The characterisation of Ga1−xInxAs,Al1−xInxAs and InP epitaxial layers prepared by metal organic chemical vapour depositionJournal of Crystal Growth, 1984