High-efficiency InGaAsP/InP flat-surface buried heterostructure distributed feedback lasers at 1.55 μm
- 1 September 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (5) , 2153-2154
- https://doi.org/10.1063/1.339516
Abstract
A new buried heterostructure has been developed. High-efficiency (29%), high-power (37-mW) operation has been achieved with InGaAsP/InP distributed feedback lasers emitting at 1.55 μm by using the novel buried heterostructure.This publication has 8 references indexed in Scilit:
- Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order gratingElectronics Letters, 1986
- Sufficiently side-mode-suppressed high-output-power 1.5 μm DFB lasersElectronics Letters, 1986
- High light output-power single-longitudinal-mode semiconductor laser diodesJournal of Lightwave Technology, 1985
- Effect of active layer placement on the threshold current of 1.3-μm InGaAsP etched mesa buried heterostructure lasersApplied Physics Letters, 1984
- Analysis of leakage currents in 1.3-µm InGaAsP real-index-guided lasersJournal of Lightwave Technology, 1984
- Shunt current and excess temperature sensitivity of
I
th
and η
ex
in 1.3 μm InGaAsP DH lasersElectronics Letters, 1982
- InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold currentElectronics Letters, 1982
- Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication SystemsJournal of Optical Communications, 1980