Orientation influence of cubic boron nitride crystal facets on the epitaxial growth of diamond film by microwave plasma chemical vapor deposition
- 28 February 1994
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 135 (3-4) , 639-642
- https://doi.org/10.1016/0022-0248(94)90160-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleationApplied Physics Letters, 1993
- Local epitaxial growth of diamond on nickel from the vapour phasePhilosophical Transactions A, 1993
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobeApplied Physics Letters, 1991
- Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor depositionApplied Physics Letters, 1990
- Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobeApplied Physics Letters, 1990