Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe

Publisher Website
Google Scholar
Abstract
We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c‐BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c‐BN. The agreement between the polarization property of Raman lines of diamond and c‐BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c‐BN. It is found that the diamond layers on c‐BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c‐BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.