Diamond crystal growth by plasma chemical vapor deposition

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Abstract
We have grown diamond crystals and polycrystalline diamond films from CH4/H2/O2 gas feeds in a simple, high-power density, 2450-MHz discharge tube reactor. Single-crystal growth rates over 20 μm/h have been achieved. The material has been analyzed using Raman spectroscopy, Auger spectroscopy, and x-ray diffraction. Control of nucleation is a major problem for growing sound films, and the high temperatures currently required for growth will limit applications. Oxygen additions were necessary to deposit diamonds over the range of feed composition we studied.