Influence of RF Power on Properties of a-Si1-xGex:H Prepared by RF Glow Discharge Decomposition
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4R)
- https://doi.org/10.1143/jjap.25.519
Abstract
The electrical and structural properties of hydrogenated amorphous silicon germanium alloys prepared by the rf glow discharge method have been measured as a function of the rf power and the gas flow rate. The photoconductivity of a-Si1-x Ge x :H films increases by a factor of 103 at x=0.45 with increasing rf power density, and the microstructure of the films changes from heterogeneous to homogeneous. This paper discusses the deposition mechanism inducing these results.Keywords
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