Influence of Deposition Conditions on Properties of Hydrogenated Amorphous Silicon Prepared by RF Glow Discharge

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Abstract
The electrical and structural properties of amorphous silicon films prepared by pure silane rf glow dicharge have been measured as a function of the rf power, the substrate temperature, the gas flow rate and the gap between the two electrodes. The properties of the deposited films show a very different dependence on the rf power from those reported previously. The films prepared at high rf power density (1–2 W/cm2) reveal a photoconductivity comparable with that of device-grade films prepared at low rf power density (0.02 W/cm2). Increasing the gas flow rate increases the deposition rate up to 70 A/s at 2 W/cm2. The photoconductivity of films prepared at this high deposition rate is 1.2×10-5 (Ω·cm)1 at 600 nm, 1 mW/cm2. This paper discusses the deposition mechanism inducing these results.