Preparations of a-Si:H from Higher Silanes (SinH2n+2) with the High Growth Rate
- 1 September 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (9) , L639-642
- https://doi.org/10.1143/jjap.20.l639
Abstract
Amorphous(a-)Si:H films showing an excellent photoconductive property were prepared by glow discharge of higher silanes (Si n H2n+2[n=2–4]) at high growth rate more than 60 A/s. The gaseous mixture of higher silane was prepared by silent glow discharge of SiH4 in an apparatus connected with a glow discharge reactor. The electric conductivity of the a-Si:H prepared from the higher silane by high growth rate can be controlled over a very wide range by substitutional doping with boron or phosphrus.Keywords
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