Deep-level traps in low-dose boron-implanted and low-temperature annealed silicon
- 15 October 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8) , 727-729
- https://doi.org/10.1063/1.92060
Abstract
The electronic defect levels in low‐dose (1–8×1012 cm−2) B‐implanted Si after annealing at 550 °C are measured by the deep level transient spectroscopy method. The defects, which distribute in accordance with the B profile, are assigned to interstitial‐ and vacancy‐boron complexes; Ev +0.27 and Ev +0.43 eV, and Ev +0.47 eV, respectively. In contrast with these defects, a uniform distribution in the implanted layer is observed for Ev +0.56 eV, which is assigned to a divacancy and/or vacancy cluster. Other defects of which the energy levels are very close to those of interstitial‐ and vacancy‐oxygen complexes are also observed.Keywords
This publication has 13 references indexed in Scilit:
- Electronic defect levels in self-implanted cw laser-annealed siliconApplied Physics Letters, 1979
- Defect annealing in phosphorus implanted silicon: A D.L.T.S. studyApplied Physics A, 1979
- Defect states associated with dislocations in siliconApplied Physics Letters, 1979
- Defect spatial distributions in annealed ion-implanted silicon measured by a transient capacitance techniqueApplied Physics Letters, 1976
- Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ionsSolid-State Electronics, 1974
- Determination of deep levels in semiconductors from C-V measurementsIEEE Transactions on Electron Devices, 1972
- Defect Centers in Boron-Implanted SiliconJournal of Applied Physics, 1971
- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†International Journal of Electronics, 1969
- Interstitial Defects in p-Type SiliconIEEE Transactions on Nuclear Science, 1969