Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
- 1 March 1979
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 18 (3) , 275-278
- https://doi.org/10.1007/bf00885514
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- EPR study of neutron-irradiated silicon: A positive charge state of thesplit di-interstitialPhysical Review B, 1976
- Fast transient capacitance measurements for implanted deep levels in siliconApplied Physics B Laser and Optics, 1975
- Some new results in the characterization of defects in phosphorus ion-implanted siliconRadiation Effects, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Ion implantation: A useful tool for semiconductor researchApplied Physics A, 1974
- The annealing characteristics of phosphorous implanted silicon. IPhilosophical Magazine, 1972
- Electrical measurements on silicon layers implanted with 50 keV phosphorus ionsRadiation Effects, 1972
- Defect Centers in Boron-Implanted SiliconJournal of Applied Physics, 1971
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- ANNEALING CHARACTERISTICS OF n-TYPE DOPANTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969