Electrical measurements on silicon layers implanted with 50 keV phosphorus ions

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Abstract
Silicon single crystals have been implanted at room temperature with 50 keV phosphorus ions at doses between 1013 and 1015 ions/cm2. After annealing treatments the number of carriers and the carrier mobility have been measured at temperatures between 77 K and 295 K. For the implant that received 1014 ions/cm2 the measurements were extended down to 4 K. The depth distribution of the number of carriers and of the carrier mobility has also been studied. After annealing treatments at 550°C or at higher temperatures the implants with 1015 ions/cm2 had carrier depth distributions which were in good agreement with the Lindhard-Scharff-Schiött theory for amorphous materials. However for the implants with 1014 ions/cm2 the carrier profiles diverged strongly from this theory. A discussion is given about possible errors in the electrical measurements on ion implanted semiconductors.