Low energy boron and phosphorus implants in silicon (a) electrical sheet measurements

Publisher Website
Google Scholar
Abstract
Silicon wafers were implanted in 〈111〉-direction with boron and phosphorus ions of 7 keV at room temperature. Doses between 1012 and 1018 ions/cm2 were applied. After successive annealing steps the electrical properties of the implanted layers have been determined by Hall effect and sheet resistivity measurements. The annealing characteristics of the implants depend on ion dose and species. Three annealing stages can be distinguished: (I) the temperature range below 500°C, (II) 500—700°C, (III) 700—900°C. After annealing at 90°C the apparent electrical yield is proportional to dose for all implants and amounts to approx. 80 per cent for boron and 40 per cent for phosphorus. Sheet resistivity vs. dose curves were derived for the annealing temperature of 400°C and used for the fabrication of position sensitive detectors. The position characteristics were found to be linear within ∼1 per cent for resistive layers as long as 20 cm.