Uniaxial stress dependence of ultrasonic attenuation in p-type silicon

Publisher Website

15 June 1972

journal article
Published by Elsevier in Solid State Communications

Vol. 10 (12) , 1309-1312
https://doi.org/10.1016/0038-1098(72)90966-0

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

Low-Temperature Thermal Conductivity of $p$ -Type Ge and Si
Physical Review B, 1971
Interaction of Microwave Phonons with Donor Electrons in Ge and Si
Physical Review B, 1970
Effective-Mass Theoretical Approach to Optical and Microwave Phenomena in Semiconductors I. Zeeman Effect of Acceptors in Si and Ge
Journal of the Physics Society Japan, 1964
Ultrasonic Wave Propagation in Doped $n$ -Germanium and $p$ -Silicon
Physical Review B, 1964
Effect of Doping on the Elastic Constants of Silicon
Physical Review B, 1963
Spin-Lattice Relaxation of Shallow Donor States in Ge and Si through a Direct Phonon Process
Physical Review B, 1960