Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
- 31 August 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (7-8) , 1627-1630
- https://doi.org/10.1016/s0038-1101(98)00083-5
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Society for the Promotion of Science (JSPS-RFTF 96P00101)
This publication has 14 references indexed in Scilit:
- CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111)Japanese Journal of Applied Physics, 1997
- Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on SiliconJapanese Journal of Applied Physics, 1996
- Characterization of molecular beam epitaxy grown CdF2 layers by x-ray diffraction and CaF2:Sm photoluminescence probeJournal of Vacuum Science & Technology A, 1995
- High-quality CdF2 layer growth on CaF2/Si(111)Journal of Crystal Growth, 1995
- Transistor action of metal (CoSi 2 )/insulator (CaF 2 ) hot electron transistor structureElectronics Letters, 1992
- Epitaxial Growth of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structure on Si(111)Japanese Journal of Applied Physics, 1992
- Low Temperature (∼420°C) Epitaxial Growth of CaF2/Si(111) by Ionized-Cluster-Beam TechniqueJapanese Journal of Applied Physics, 1990
- Low temperature epitaxy by ionized-cluster beamJournal of Vacuum Science & Technology A, 1986
- Thermal expansion of cadmium fluorideJournal of Physics and Chemistry of Solids, 1976
- Electronegativity as a unifying concept in the determination of Fermi energies and photoelectric thresholdsChemical Physics Letters, 1975