Applicability of themethod to the electronic structure of quantum dots
- 15 April 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (16) , 9971-9987
- https://doi.org/10.1103/physrevb.57.9971
Abstract
The method has become the “standard model” for describing the electronic structure of nanometer-size quantum dots. In this paper we perform parallel and and direct-diagonalization pseudopotential studies on spherical quantum dots of an ionic material—CdSe, and a covalent material—InP. By using an equivalent input in both approaches, i.e., starting from a given atomic pseudopotential and deriving from it the Luttinger parameters in calculation, we investigate the effect of the different underlying wave-function representations used in and in the more exact pseudopotential direct diagonalization. We find that (i) the envelope function has a distinct (odd or even) parity, while atomistic wave function is parity-mixed. The approach produces an incorrect order of the highest valence states for both InP and CdSe dots: the -like level is above the -like level. (ii) It fails to reveal that the second conduction state in small InP dots is folded from the point in the Brillouin zone. Instead, all states in are described as Γ-like. (iii) The overestimates the confinement energies of both valence states and conduction states. A wave-function projection analysis shows that the principal reasons for these errors in dots are (a) use of restricted basis set, and (b) incorrect bulk dispersion relation. Error (a) can be reduced only by increasing the number of basis functions. Error (b) can be reduced by altering the implementation so as to bend upwards the second lowest bulk band, and to couple the conduction band into the -like dot valence state. Our direct diagonalization approach provides an accurate and practical replacement to the standard model in that it is rather general, and can be performed simply on a standard workstation.
Keywords
This publication has 48 references indexed in Scilit:
- Excited state luminescence and fine structure in CdSe quantum dotsJournal of Luminescence, 1997
- Quantum confinement and ultrafast dephasing dynamics in InP nanocrystalsPhysical Review B, 1997
- Colloidal chemical synthesis and characterization of InAs nanocrystal quantum dotsApplied Physics Letters, 1996
- Highly efficient band-edge emission from InP quantum dotsApplied Physics Letters, 1996
- Enhancement of electron-hole exchange interaction in CdSe nanocrystals: A quantum confinement effectPhysical Review B, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Observation of the "Dark Exciton" in CdSe Quantum DotsPhysical Review Letters, 1995
- Ultranarrow Luminescence Lines from Single Quantum DotsPhysical Review Letters, 1995
- Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dotsApplied Physics Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994