Insulation degradation and anomalous etching phenomena in silicon nitride films prepared by plasma-enhanced deposition
- 1 February 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 112 (3) , 279-288
- https://doi.org/10.1016/0040-6090(84)90218-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electrical properties and their thermal stability for silicon nitride films prepared by plasma-enhanced depositionJournal of Applied Physics, 1982
- Characterization of plasma-deposited silicon nitride filmsJournal of Applied Physics, 1980
- Electrical properties of Si-N films deposited on silicon from reactive plasmaJournal of Applied Physics, 1978
- Advances in deposition processes for passivation filmsJournal of Vacuum Science and Technology, 1977
- The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge ReactionJournal of the Electrochemical Society, 1967