Highly reliable and efficient semiconductor wafer-bondedAlGaInP/GaP light-emitting diodes
- 18 January 1996
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (2) , 132-134
- https://doi.org/10.1049/el:19960098
Abstract
Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100 000 h under accelerated life test at an ambient temperature of 55 degrees C (70 A/cm(2)). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250 degrees C).Keywords
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