Critical Conditions for Transitions between Stationary and Non‐Stationary High‐Field Domains in Semi‐Insulators

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Abstract
An analysis of a fluctuation in the neighborhood of singular points of the Poisson and transport equations for a semi‐insulator with negative differential conductivity due to field enhanced recombination yields a criterion for the transitions between stationary and non‐stationary high‐field domains. Critical voltages (domain lengths) and current oscillation frequencies are given for different saturation currents and agree well with experimental results reported for field‐quenched CdS. It has been shown that, with increasing applied voltage, alternating regimes of stationary and non‐stationary solutions exist for the model discussed, in agreement with recently reported experimental indications.