Preparation and characterization of tungsten tips for scanning tunneling microscopy
- 1 May 1994
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 65 (5) , 1558-1560
- https://doi.org/10.1063/1.1144891
Abstract
Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (∼10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.Keywords
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