Defect-related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxy
- 15 May 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3765-3768
- https://doi.org/10.1063/1.332931
Abstract
We have studied defect‐related emissions in low‐temperature (∼4 K) photoluminescence of lightly Si‐doped AlxGa1−xAs (xd,X) and defect complex (d) emissions depend on the mole fraction x; the (d,X) emission becomes dominant for x>0.27. This suggests different origins for the (d,X) and (d) emissions. The (d,X) and (d) emissions are tentatively associated with oxygen and carbon, respectively.This publication has 26 references indexed in Scilit:
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