MBE growth and properties of ZnO on sapphire and SiC substrates
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 855-862
- https://doi.org/10.1007/bf02666649
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Determination of the GaN/AlN band offset via the (-/0) acceptor level of ironApplied Physics Letters, 1994
- Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopyApplied Physics Letters, 1994
- Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)Applied Physics Letters, 1994
- Integrated heterostructure devices composed of II–VI materials with Hg-based contact layersJournal of Crystal Growth, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984